| Item | Specification |
Material
| High Purity Monocystalline Al2O3 (≥99.996%) |
| Orientation C to M | C-plane(0001) off to M-plane (1100) 0.2±0.1°;0°± 0.1°(A-axis) |
| Orientation Tolerance C to A | 0.00±0.1° |
| Primary Flat to A-plane（11-20） | A-plane ± 0.2° |
Diameter
| 50.8±0.1mm, 100±0.1mm, 150±0.2mm |
Thickness
| 420~440um, 640-660um，1300mm |
| Flat Length | 16±1.0mm, 30±1.0mm, 47.5±1.5mm |
Edge profile
| R |
| TTV | ≤5um |
Bow
| 0~-10um
|
| Warp | ≤15um |
Front Side Roughness
| ＜0.3nm |
| LTV | ≤1.8um |
| R Plane | R9 |
Back Side Roughness
| 0.8-1.2um |
| Laser Mark | Back side |
Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
