Grade
| Zero MPD
| Production | Research Grade | Dummy Grade |
Diameter
| 50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm |
Thickness
| 4H-N
| 350 μm±25μm |
| 4H-SI | 500 μm±25μm |
Wafer Orientation
| Off axis : 4.0° toward 1120 ±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI |
|
Micropipe Density
| ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 |
| Resistivity | 4H-N
| 0.015~0.028 Ω·cm |
6H-N
| 0.02~0.1 Ω·cm |
4/6H-SI
| >1E5 Ω·cm
| (90%) >1E5 Ω·cm |
Primary Flat
| {10-10}±5.0° |
Primary Flat Length
| 15.9 mm±1.7 mm, 22.2 mm±3.2 mm, 32.5 mm±2.0 mm, 47.5 mm±2.5 mm |
Secondary Flat Length
| 8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm |
Secondary Flat Orientation
| Silicon face up: 90° CW. from Prime flat ±5.0° |
Edge exclusion
| 3 mm |
TTV/Bow /Warp
| ≤15μm /≤25μm /≤40μm |
Roughness
| Polish Ra≤1 nm |
CMP Ra≤0.5 nm |
Cracks by high intensity light
| None
| None
| 1 allowed, ≤1 mm |
Hex Plates by high intensity light
| Cumulative area≤1 %
| Cumulative area≤1 %
| Cumulative area≤3 % |
Polytype Areas by high intensity light
| None
| Cumulative area≤2 %
| Cumulative area≤5% |
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 8 scratches to 1×wafer diameter cumulative length |
|
|
Edge chip
| None
| 3 allowed, ≤0.5 mm each
| 5 allowed, ≤1 mm each |
| Contamination by | None |
| high intensity light |
Silicon carbide is a man_made material manufactured through heating silica sand and carbon to high temperatures in the Acheson furnace technique. Silicon carbide is an extremely hard material (Mohs hardness 9.25), is chemically inert and does not melt. Silicon Carbide has a high thermal conductivity, a low coefficient of thermal expansion, is thermal shock and abrasion resistant and has strength at high temperatures. Silicon carbide's varied properties make it an effective material in many different applications.
Silicon carbide has good hardness only second to the hardest diamond, hardness is 9.5. Due to good thermal conductivity, silicon carbide is a kind of semiconductor and can oxidation resistance in high temperature. Silicon carbide has wide applications because of stable chemical performance, high thermal conductivity, small thermal expansion coefficient, good wear_resisting performance. Low grade silicon carbide about 85% is an excellent deoxidizer, which can speed up steel making and facilitate the control of chemical composition to improve the steel quality. Therefore, the market price of silicon carbide is still stable.
1. What are the main properties of SiC?
The combination of silicon with carbon provides this material with excellent mechanical, chemical and thermal properties, including:
high thermal conductivity
low thermal expansion and excellent thermal shock resistance
low power and switching losses
high energy efficiency
high operating frequency and temperature (operating up to 200°C junction)
small die size (with the same breakdown voltage)
intrinsic body diode (MOSFET device)
excellent thermal management which reduces cooling requirements
long lifetime
