Type/Dopant
| N-Type/Si | P-Type/Zn |
| Dopant | As, Sb | Ga |
| Growth MethodCZ | CZ |
| Diameter | 2", 3", 4", 6" |
| Orientation | (100)±0.5° |
| Thickness (µm) | 175-500um±25um |
| OF/IF | US EJ |
| Resistivity (ohm-cm) | 0.005-30 | 0.005-0.4 |
| Etch Pitch Density (/cm2) | <300 | <300 |
| TTV [P/P] (µm) | <15 |
| TTV [P/E] (µm) | <25 |
| Warp (µm) | <25 |
| Surface Finished | P/P, P/E, E/E |
Ge wafer is an elemental and popular semiconductor material , due to its excellent crystallographic properties and unique electric properties , Ge wafer is widly used in Sensor , Solar cell and Infrared optics applications . WEISS WAFER can provide low dislocation and epi ready Ge wafers to meet your unique germanium needs . Ge wafer is produced as per SEMI. standard and packed in standard cassette with vacuum sealed in clean room enviroment , with a good quality control system , WEISS WAFER is dedicated to providing clean and high quality Ge wafer products . please contact us for more Ge product information
