Type/Dopant
| Semi-Insulated
| P-Type/Zn | N-Type/Si | N-Type/Si |
| Application | Micro Eletronic | LED | Laser Diode |
| Growth Method | VGF |
| Diameter | 2", 3", 4", 6" |
| Orientation(100)±0.5° | (100)±0.5° |
| Thickness | 350-625um±25um |
| OF/IF | US EJ or Notch |
| Carrier Concentration | - | (0.5-5)*1019 | (0.4-4)*1018 | (0.4-0.25)*1018
|
| Resistivity (ohm-cm) | >107 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 |
| Mobility (cm2/V.S.) | >4000 | 50-120 | >1000 | >1500 |
| Etch Pitch Density (/cm2) | <5000 | <5000 | <5000 | <500 |
| TTV [P/P] (µm) | <5 |
| TTV [P/E] (µm) | <10 |
| Warp (µm) | <10 |
| Surface Finished | P/P, P/E, E/E |
| Note: | Other Specifications maybe available upon request |
4” GaAs Wafer Backthinning
Discover why GaAs wafers are the becoming the worldwide semiconductor material of choice.
A variety of different wafer materials and sizes are used across the semiconductor industry. GaAs (Gallium Arsenide) wafers exhibit certain electronic properties that are superior to Silicon (Si). This advantage has allowed GaAs wafers to become popular in high frequency and opto-electronic applications, despite strict industry requirements.
