GaN (Gallium Nitride)

Product Detail

	GaN/ Al₂O₃ Substrates (4")
Item	Un-doped	N-type	High-doped N-type
Size 尺寸 (mm)	Φ100.0±0.5 (4")
Substrate Structure	GaN on Sapphire(0001)
SurfaceFinished	(Standard: SSP Option: DSP)
Thickness (μm)	4.5±0.5; 20±2;Customized
Conduction Type	Un-doped	N-type	High-doped N-type
Resistivity (Ω·cm）(300K)	≤0.5	≤0.05	≤0.01
GaN Thickness Uniformity	≤±10% (4")
Dislocation Density (cm-2)	≤5×108
Useable Surface Area	＞90%
Package	Packaged in a class 100 clean room environment.

Mobile: +86-13631407937

Email: sales@weisswafer.com

Address: 610, Building 12, No.1 Ping An Avenue, Pinghu Community Pinghu Street, Longgang District, Shenzhen