InP (Indium Phosphide)

InP (Indium Phosphide)
Product Detail
Type
Semi-InsulatedN-TypeP-TypeNP Type
Dopant   
FeS, SnZnUndoped
Growth Method
VGF
Diameter
2", 3", 4", 6"
Orientation
(100)±0.5°
Thickness   (µm) 350-675um ±25um
OF/IF
US EJ
Carrier Concentration
-(0.8-8)*1018(0.8-8)*1018(1-10)*1015
Resistivity (ohm-cm)>0.5*107---
Mobility (cm2/V.S.)>10001000-250050-1003000-5000
Etch Pitch Density (/cm2)<5000<5000<500<500
TTV [P/P] (µm)<10
TTV [P/E] (µm)<15
Warp (µm)<15
Surface Finished
P/P, P/E, E/E
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